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![](graphics/fmosfet2.png) |
![](graphics/fmosfet3.png) |
![](graphics/fmosfet4.png) |
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FDA38N30 |
300 |
38.0 |
0.085 |
60 |
2600 |
TO-3PN |
N沟道,DMOS与平带工艺,用于AC-DC等 |
FQA38N30 |
300 |
38.4 |
0.0650 |
90 |
3380 |
TO-3PN |
N沟道增强型,适用于开关电源、DC /DC |
FDA59N30 |
300 |
59.0 |
0.056 |
77 |
3590 |
TO-3P |
N沟道增强型,用于功率因素校正等 |
FDP15N40 |
400 |
15.0 |
0.300 |
28 |
1310 |
TO-220/F |
N沟道增强型,用于高效开关电源、功率因素校正等 |
FDP24N40 |
400 |
24.0 |
0.175 |
46 |
2270 |
TO-220/F |
FQP11N50CF |
500 |
11.0 |
0.4800 |
43 |
1515 |
TO-220 |
DMOS工艺,N沟道增强型、高雪崩耐量、增强的dv/dt性能,寄生超快恢复二极管,适用于高效开关电源、功率因数校正等 |
FQPF11N50CF |
500 |
11.0* |
0.4800 |
43 |
1515 |
TO-220F |
FQP13N50 |
500 |
12.5 |
0.3300 |
45 |
1800 |
TO-220 |
DMOS工艺,N沟道增强型、高雪崩耐量、开关特性优良、增强的dv/dt性能,100%雪崩耐量检测,适用于高效开关电源、功率因数校正、半桥式电子照明电路等 |
FQPF13N50 |
500 |
12.5* |
0.3300 |
45 |
1800 |
TO-220F |
FQP13N50C |
500 |
13.0 |
0.390 |
43 |
1580 |
TTO-220/F |
FQA16N50 |
500 |
16.0 |
0.2500 |
60 |
2300 |
TO-3P |
FDP16N50 |
500 |
16.0 |
0.380 |
32 |
1495 |
TO-220/F |
N沟道增强型,DMOS工艺 |
FDA16N50_F109 |
500 |
16.5 |
0.380 |
32 |
1495 |
TO-3PN |
N沟道UniFET,适用PDP TV、不间断电源 |
FDP18N50 |
500 |
18.0 |
0.265 |
45 |
2200 |
TO-220/F |
N沟道增强型,DMOS工艺 |
FQP18N50V2 |
500 |
18.0 |
0.2250 |
42 |
2530 |
TO-220 |
FQPF18N50V2 |
500 |
18.0* |
0.2250 |
42 |
2530 |
TO-220F |
FDA18N50 |
500 |
19.0 |
0.2200 |
45 |
2200 |
TO-3P |
IRFP460C |
500 |
20.0 |
0.2000 |
130 |
4590 |
TO-3PN |
FDA20N50 |
500 |
22.0 |
0.2000 |
45.6 |
2400 |
TO-3P |
FDA24N50 |
500 |
24.0 |
0.1600 |
65 |
3120 |
TO-3PN |
FDA24N50F |
500 |
24.0 |
0.1660 |
65 |
3240 |
TO-3PN |
FQA24N50 |
500 |
24.0 |
0.1560 |
90 |
3500 |
TO-3P |
DMOS工艺,N沟道增强型,增强的dv/dt性能,适用于高效开关电源、功率因数校正、电机驱动、焊接电源等 |
FQA28N50 |
500 |
28.4 |
0.1260 |
110 |
4300 |
TO-3P |
FDA28N50 |
500 |
28.0 |
0.1220 |
80 |
3866 |
TO-3PN |
N沟道增强型,适用于高效开关电源 |
FQL40N50 |
500 |
40.0 |
0.0850 |
155 |
5800 |
TO-264 |
N沟道增强型,适用电机驱动、焊接电源 |
FQL40N50F |
500 |
40.0 |
0.0850 |
155 |
5800 |
TO-264 |
寄生超快恢复二极管,适用全桥移相电路 |
FDH45N50F |
500 |
45.0 |
0.120 |
105 |
5100 |
TO-247 |
适用于照明、不间断电源、AC-DC |
FDA50N50 |
500 |
48.0 |
0.0890 |
105 |
4979 |
TO-3P |
DMOS工艺,N沟道增强型、高雪崩耐量、开关特性优越,适用于高效开关电源、功率因数校正等 |
FDH50N50 |
500 |
48.0 |
0.0890 |
105 |
4979 |
TO-247 |
FDL100N50F |
500 |
100.0 |
0.055 |
238 |
12000 |
TO-264 |
N沟道增强型,用于功率因素校正等 |
FQP5N60C |
600 |
4.5 |
2.0000 |
15 |
515 |
TO-220 |
DMOS工艺,N沟道增强型、低栅极电荷、高雪崩耐量、开关特性优越,增强的dv/dt性能,适用于高效开关电源、功率因数校正、半桥式电子照明电路等 |
FQPF5N60C |
600 |
4.5* |
2.0000 |
15 |
515 |
TO-220F |
FQP8N60C |
600 |
7.5 |
1.0000 |
28 |
965 |
TO-220 |
*电流受最大结温控制 |
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