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| FQPF8N60C | 600 | 7.5* | 1.0000 | 28 | 965 | TO-220F | DMOS工艺，N沟道增强型、低栅极电荷、高雪崩耐量、开关特性优越，增强的dv/dt性能，适用于高效开关电源、功率因数校正、半桥式电子照明电路等 | |
| FQP10N60CF | 600 | 9.0 | 0.6100 | 44 | 1570 | TO-220 | ||
| FQPF10N60CF | 600 | 9.0* | 0.6100 | 44 | 1570 | TO-220F | ||
| FQP10N60C | 600 | 9.5 | 0.6000 | 44 | 1570 | TO-220 | ||
| FQP12N60C | 600 | 12.0 | 0.5300 | 48 | 1760 | TO-220 | ||
| FQPF12N60C | 600 | 12.0* | 0.5300 | 48 | 1760 | TO-220F | ||
| FCP16N60 | 600 | 16.0 | 0.220 | 50 | 2100 | TO-220/F | N沟道，用于AC/DC，LCD，LED，PDP TV，太能逆变器 | |
| FCP190N60 | 600 | 20.2 | 0.199 | 57 | 2200 | TO-220/F | ||
| FQA24N60 | 600 | 23.5 | 0.1800 | 110 | 4200 | TO-3PN | N沟道增强型，适用于高效开关电源 | |
| FCA35N60 | 600 | 35.0 | 0.079 | 139 | 4990 | TO-3PN | 新一代高压MOSFET | |
| FCA47N60 | 600 | 47.0 | 0.0580 | 210 | 5900 | TO-3PN | 基于先进电荷平衡原理，N沟道增强型、开关特性优越，满足各种开关型AC/DC向小型化、高效率方向发展 | |
| FCA47N60F | 600 | 47.0 | 0.0620 | 210 | 5900 | TO-3PN | ||
| FCH47N60 | 600 | 47.0 | 0.070 | 210 | 5900 | TO-247 | 超级MOS，用于太阳能逆变器 | |
| FCH76N60 | 600 | 76.0 | 0.036 | 218 | 9310 | TO-247 | 超级MOS用于太阳能逆变器、AC/DC | |
| FCH041N06E | 600 | 76.0 | 0.041 | 277 | 10800 | TO-247 | 新高压SJ结MOSFET，用于PFC等 | |
| FQP6N80C | 800 | 5.5 | 2.1000 | 21 | 1010 | TO-220 | DMOS工艺，N沟道增强型、低栅极电荷、高雪崩耐量、开关特性优越，适用于高效开关电源 | |
| FQPF6N80C | 800 | 5.5* | 2.1000 | 21 | 1010 | TO-220F | ||
| FQP8N80C | 800 | 8.0 | 1.550 | 35 | 1580 | TO-220/F | N沟道增强型，超快开关100%雪崩检测 | |
| FQA10N80C | 800 | 10.0 | 0.9300 | 45 | 2150 | TO-3P | DMOS工艺，N沟道增强型、开关特性优越，增强的dv/dt性能，适用于高效开关电源、功率因数校正等 | |
| FQA13N80 | 800 | 12.6 | 0.750 | 4568 | 2700 | TO-3P | ||
| FQA13N80F109 | 800 | 12.6 | 0.5800 | 68 | 2700 | TO-3PN | ||
| FQP4N90C | 900 | 4.0 | 3.5000 | 17 | 740 | TO-220 | DMOS工艺，N沟道增强型、开关特性优越，增强的dv/dt性能，100%雪崩耐量检测，适用于高效开关电源等 | |
| FQPF4N90C | 900 | 4.0* | 3.5000 | 17 | 740 | TO-220F | ||
| FQP4N90 | 900 | 4.2 | 2.7000 | 24 | 860 | TO-220 | ||
| FQA6N90CF109 | 900 | 6.0 | 1.9300 | 30 | 1360 | TO-3PN | DMOS工艺，N沟道增强型 | |
| FQA6N90 | 900 | 6.4 | 1.500 | 40 | 1440 | TO-3P | DOMOS工艺，N沟道增强型 | |
| FQP9N90C | 900 | 8.0 | 1.1200 | 45 | 2100 | TO-220 | DMOS工艺，N沟道增强型、开关特性优越，增强的dv/dt性能，100%雪崩耐量检测，适用于高效开关电源等 | |
| FQPF9N90C | 900 | 8.0* | 1.1200 | 45 | 2100 | TO-220F | ||
| FQA9N90C | 900 | 9.0 | 1.400 | 45 | 2100 | TO-3P | DOMOS工艺，N沟道增强型 | |
| FQA9N90CF109 | 900 | 9.0 | 1.1200 | 45 | 2100 | TO-3PN | DMOS工艺，N沟道增强型、开关特性优越，适用于高效开关电源、功率因数校正、半桥式电子照明电路等 | |
| FQA11N90C | 900 | 11.0 | 1.100 | 60 | 2530 | TO-3P | ||
| FQA11N90CF109 | 900 | 11.0 | 0.9100 | 60 | 2530 | TO-3PN | ||
| FQD2N100 | 1000 | 1.6 | 9000 | 12 | 400 | D/I-PAK | ||
| FQH8N100C | 1000 | 8.0 | 1.2000 | 53 | 2475 | TO-247 | ||
| FQH8N100C | 1000 | 8.0 | 1.45 | 53 | 2475 | TO-3P | N沟道增强型, DOMOS工艺 | |
| *电流受最大结温控制 | ||||||||
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